IPB033N10N5LFATMA1 is a 100V OptiMOSTM5LinearFET ideal for hot-swap and e-fuse applications.
- Very low on-resistance RDS(on)
- Wide safe operating area SOA
- N-channel, normal level
- 100% avalanche tested
- Qualified according to JEDEC for target applications
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Product details
Channel Type:
N Channel
|
Drain Source Voltage Vds:
100V
|
Continuous Drain Current Id:
120A
|
Drain Source On State Resistance:
0.0027ohm
|
Transistor Case Style:
TO-263 (D2PAK)
|
Transistor Mounting:
Surface Mount
|
Rds(on) Test Voltage:
10V
|
Gate Source Threshold Voltage Max:
3.3V
|
Power Dissipation:
179W
|
No. of Pins:
3Pins
|
Operating Temperature Max:
150°C
|
Product Range:
OptiMOS 5
|
Qualification:
-
|
MSL:
MSL 1 - Unlimited
|
Other details
Brand |
INFINEON |
Part Number |
IPB033N10N5LFATMA1 |
Quantity |
Each (Supplied on Cut Tape) |
Technical Data Sheet EN |
|
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