The FDMS3572 is an UItraFET Trench® N-channel MOSFET combines characteristics that enable benchmark efficiency in power conversion applications. Optimized for RDS (ON), low ESR, low total and Miller gate charge. It is ideal for high frequency DC to DC converters.
- Low Miller charge
- Optimized efficiency at high frequencies
Applications
Power Management, Industrial
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Product details
| Channel Type:
N Channel
|
| Drain Source Voltage Vds:
80V
|
| Continuous Drain Current Id:
8.8A
|
| Drain Source On State Resistance:
0.0165ohm
|
| Transistor Case Style:
Power 56
|
| Transistor Mounting:
Surface Mount
|
| Rds(on) Test Voltage:
10V
|
| Gate Source Threshold Voltage Max:
3.2V
|
| Power Dissipation:
2.5W
|
| No. of Pins:
8Pins
|
| Operating Temperature Max:
150°C
|
| Product Range:
-
|
| Qualification:
-
|
| MSL:
MSL 1 - Unlimited
|
Other details
| Brand |
ONSEMI |
| Part Number |
FDMS3572 |
| Quantity |
Each (Supplied on Cut Tape) |
| Technical Data Sheet EN |
 |
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