The NDT3055 is a 60V N-channel enhancement mode Field Effect Transistor produced using high cell density and DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss and resistance to transients are needed. This product is general usage and suitable for many different applications.
- High power and current handling capability
Applications
Power Management, Consumer Electronics
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Product details
| Channel Type:
N Channel
|
| Drain Source Voltage Vds:
60V
|
| Continuous Drain Current Id:
4A
|
| Drain Source On State Resistance:
0.1ohm
|
| Transistor Case Style:
SOT-223
|
| Transistor Mounting:
Surface Mount
|
| Rds(on) Test Voltage:
10V
|
| Gate Source Threshold Voltage Max:
3V
|
| Power Dissipation:
3W
|
| No. of Pins:
4Pins
|
| Operating Temperature Max:
150°C
|
| Product Range:
-
|
| Qualification:
-
|
| MSL:
MSL 1 - Unlimited
|
Other details
| Brand |
ONSEMI |
| Part Number |
NDT3055 |
| Quantity |
Each (Supplied on Cut Tape) |
| Technical Data Sheet EN |
 |
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