TBD62064AFAG(Z,EHZ is a BiCD silicon monolithic integrated circuit. It has a clamp diode for switching inductive loads built-in in each output.
- 4channel high current sink type DMOS transistor array
- High voltage is 50V (max, Ta = 25°C), high current is 1.5A/ch (max, Ta = 25°C)
- Input voltage range from 2.5 to 25V (output on, IOUT = 100mA or upper, VOUT = 2V, Ta = -40 to 85°C)
- COMMON pin voltage is 50V (Ta = -40 to 85°C, max)
- Clamp diode forward current is 1.25A (max, Ta = -40 to 85°C)
- Output leakage current is 1.0µA (max, VIN = 0V, VOUT = 50V, Ta = 25°C)
- Turn on delay is 1.0µs (typ, VOUT = 50V, RL = 42Kohm, CL = 15pF)
- Turn off delay is 1.7µs (typ, VOUT = 50V, RL = 42Kohm, CL = 15pF)
- P-SSOP24-0613-1.00-001 package, operating temperature range from -40 to 85°C
Footnotes
Please be careful about thermal conditions during use.
Product details
| Supply Voltage Min:
-
|
| Supply Voltage Max:
-
|
| No. of Outputs:
4Outputs
|
| Output Voltage:
50V
|
| Output Current:
1.5A
|
| Driver Case Style:
PSSOP
|
| Product Range:
-
|
Other details
| Brand |
TOSHIBA |
| Part Number |
TBD62064AFAG(Z,EHZ |
| Quantity |
Each |
| Technical Data Sheet EN |
 |
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