Channel Type:
N Channel
|
Drain Source Voltage Vds:
40V
|
Continuous Drain Current Id:
200A
|
Drain Source On State Resistance:
800µohm
|
Transistor Case Style:
L-TOGL
|
Transistor Mounting:
Surface Mount
|
Rds(on) Test Voltage:
10V
|
Gate Source Threshold Voltage Max:
3V
|
Power Dissipation:
230W
|
No. of Pins:
9Pins
|
Operating Temperature Max:
175°C
|
Product Range:
U-MOSIX-H Series
|
Qualification:
AEC-Q101
|
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